Current News
WaferChek™ In-situ Process Monitoring
WaferChek in-situ monitoring uses color CCD detection of surface property changes as a measure of process progress and completion, providing more reliable control than timing, thresholding, or rate-of-change determination. It allows automatic adjustment of the process on a wafer-at-a-time basis, improving wafer-to-wafer uniformity while reducing chemistry consumption and disposal. Data for management and process tracking is captured, along with a video file for subsequent process analysis.

Poly Silicon
Poly Silicon
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Silicon Nitride
Silicon Nitride
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Silicon Oxide
Silicon Oxide


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Copper
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Aluminum
Aluminum
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Aluminum
Nickel
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Aluminum
Titanium Tugsten
     

In-situ Chemical Collection Ring (Patent Pending)
The novel chemical collection ring allows in-situ collection and reuse of processing chemistries, enabling reduced consumption of these expensive materials. Independent time control of solution collection ensures the most pure chemistry recirculation.

When in the closed position, the collection ring is completely sealed, maintaining purity of chemistry, free of cross-contamination. All drainage is gravity-driven, which, combined with the sealed collection ring, eliminates the need for forced exhaust. It also avoids hygroscopic action which could water-load the chemistries, making them unsuitable for recirculation.



Open Cup

Open Cross Section

Closed Cup


Open Position – Stream Etch

Open Position – Spray Etch

Closed Position – Clean Up


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Structured Wafer Etch Processing
For backside etch and clean, tooling is provided that floats the wafer on a 100 µ gas cushion. The gas cushion ensures that there is no contact with the wafer’s active surface. The wafer is held in place through centrifugal force and locating pins at the periphery and by vacuum hold-down for spray processing. Programmable lifting pins position the wafer for structured, active surface or backside processing. Gas is filtered at the point of use in the spindle tool.
     
High Flow Dispense
Particularly suitable for etching and cleaning, a programmable high flow stream dispense can apply up to 3,000 ml per minute of ambient or heated chemistry.  Flow rate, nozzle height, and arm motion profile and speed are fully PC programmable by individual process step. Combination dispense systems with high flow stream and spray dispensing are available as standard. 
High Flow Dispense    
     
Combination 200/300 mm Gas Seal Tooling
For single-sided etching where the backside of the wafer is completely protected against chemistry or vapor, SSEC offers a combination gas seal spindle tool for 200 mm and 300 mm wafers. With SSEC’s integrated vision/robotic system, changing a wafer size involves only a cassette or FOUP change and PC recipe change.  There is no hardware changeover, providing for the highest rate of equipment utilization.
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Backside and Bevel Edge Cleaning
Bevel etch control for 300 mm wafers allows oxide, nitride, poly silicon, and copper removal from backside and bevel exclusion zone. Proprietary spindle tooling enables specific bevel and side edge etching, independent of the wafer backside using a simple, mechanically determined etching area. This capability includes programmable flow rate for the bevel etch and the ability for DI rinse of the bevel area. The process can be used for all wafer sizes, including notched and flat wafers, with bevel 0.8-5 mm.
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Single Wafer Megasonic Scrub
Patented* single wafer megasonics with DSP power control, including power feedback from the transducer and programmable duty cycle for high power, short duration cycles achieve damage-free cleaning. The unique design, with 40 mm transducer and programmable duty cycle, chemical flow rate, and spindle speed, improves the transport of chemistries or rinse water to the wafer surface and movement of contaminants away from the surface.

*US Patent 6,539,952

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High Velocity Spray Scrub
Nitrogen-atomized, high velocity sprays—filtered down to 0.003 µm—perform double-sided cleaning or rinsing in a construction that utilizes a 100% PFA plumbing path, eliminating metals contamination as required by Front-End-of-Line (FEOL) cleaning processes. On-the-fly control of droplet size and speed, by adjustment of N2 pressure and flow, meets the needs of trench and ultra-small particle cleans at 88 and 65 nm.

     
PC Programmable Chemical Blending
The chemical blending system allows reduced chemistry usage, consuming only the amount actually needed for each wafer. Single pass or recirculated chemistry is blended according to recipe under PC control. Chemistry is transported with vacuum and pressure drive, with automatic tank washout and dry between blends.


     
PC Programmable Temperature Control
On-the-fly temperature control on a true, non-batch basis is achieved through use of programmable heaters. PFA and quartz heaters are provided for acids, bases, and DI water solutions. Solvent heaters have polished stainless steel inside surfaces. Processors also feature PFA heat exchangers with Thermo Neslab heater/chillers.




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Single-sided PVA Brush
Final touch-up clean is accomplished with a high speed rotary scrub brush, servo-driven at typical speeds to 1,000 RPM. Two pad sizes are available, depending on the process requirements. A horizontal rolling PVA sponge or nylon bristle brush scrub achieves the highest performance and most repeatable cleans. The horizontal brush is servo-driven for maximum speed control, and designed to provide 0.002" concentricity. All brush scrubs feature through-the-brush chemical dispensing for the most uniform distribution and minimum contaminant buildup. Automatic brush height control with 0.001" resolution maintains uniform contact at the surface.

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Double-sided PVA Brush<empty>
<empty>Patented* double-sided PVA brush scrubbing, with through-the-brush dispensing, utilizes the rotation of the brushes to rotate the wafer for higher force and higher speed, three-sided cleaning. Through-the-brush dispensing ensures cleanliness and uniform chemistry distribution. Standard tooling accommodates wafers from 50 mm to 300 mm, with quick, convenient change of wafer sizes.

*US Patent 5,675,856, Reissue Re. 36,767

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Drying Technology
Spot-free spin drying is the final step in clean wafer production. Spin speed and acceleration/deceleration are PC-controlled, with the rotation profile fully optimized. Additional drying capabilities complement the rotation with .003 µm filtered nitrogen assist, nitrogen through IPA assist, IPA/DI water assist, or IR lamp assist as your application requires.




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Piranha Photoresist Strip
A Teflon nozzle with mixing chamber for H2SO4 and H2O2 starts the exothermic reaction that continues on the wafer surface, for full organic absorption and contamination removal, while minimizing chemical use. Typically, < 200 ml of piranha solution is used for a 6" x 6" final reticle clean. In-situ temperature measurement is made of the exothermic reaction to ensure the process effectiveness.

O3/DI Processing
An available O3/DI water mixing system provides an environment-friendly cleaning medium. A Mykrolis pHasor Membrane Contactor, with 100% PFA fluid path, is configured to supply 40 ppm O3 bubble-free in DI, under standard atmospheric conditions.


 
     

VUV Dry Processing
Treatment with 172 nm USHIO Excimer light dry clean cycle improves subsequent wet processing steps. The pre-treatment conditions the surface for better wetting action, and generates free oxygen and ozone that transform organics to volatile oxides. The illumination also improves hydrophilic properties.



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Backside and Bevel Cleaning
Bevel etch control for 300 mm wafers allows oxide, nitride, poly silicon, and copper removal from backside and bevel exclusion zone. Proprietary tooling design provides a backside nitrogen flow that protects the dry, active area of the wafer. A bevel flow ring controls flow of chemistry to the bevel area and the bevel width.
     

Immersion Solvent Processing
A batch immersion station complements single wafer processing to give the best of both technologies, speeding subsequent single wafer stripping and reducing the chemistry usage and force of spray processing. Soaking in ambient, heated, fresh, or recirculated solvents, under control of exclusive “Equal Soak Time” and "scheduling" software, optimizes processing and ensures uniform results and maximum chamber usage. The immersion process includes wafer agitation, cascade solvent overflow, and a nitrogen blanket environment, with sealed door, to reduce moisture absorption into solvents for corrosion-free processing and lowest costs.

High Pressure Scrubbing
Single- or dual-sided high pressure scrub, with pressure servo controlled to 3,000 PSI, is extremely effective in particle removal around small features, including trench cleaning. Applications include aqueous chemistry for non-contact cleaning and solvent spray for stripping.


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Closed and Open Cup Spin Coating
Open cup spin coating for resists and polyimides, with programmable air flow, nozzle tip cleaning, and a motorized positive displacement resist pump, optimizes the process. For thick resists and square panels, closed cup processing in a solvent-rich environment provides fringe-free coating for large square glass.


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Spin Motor Control
Real time control of the spindle motor with digital signal processing and flash-loaded instruction set, including acceleration rates and spindle speeds to 10,000 RPM, achieves highly uniform film thickness control, typically well under 1%.


     

Backside EBR Clean Technology
A unique through-the-chuck backside EBR dispense is provided for square panels or wafers with backside patterns. Cleaning of the sides and back of substrates enables fully automatic hot plate bake processing after coating, with minimal maintenance requirements.




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Hot Plate Bake Processing
Coating, post exposure baking, solvent developing, and post-clean dehydration systems may be equipped with stackable hot plate bake modules with integrated exhaust and vapor prime capability. Highly uniform heating systems heat by contact or proximity, with temperatures to 150 °C, 250 °C, or 450 °C, depending on application. Optimal control software servos the hot plate temperature control bandwidth to result in fast response without overshoot.
     

Application-specific Robots
SCARA edge-grip handling robots for wafers may be equipped with 2, 3, or 4 blades, allowing separation of in-process from completed wafers. The SCARA robotic handlers are completely sealed, for operation in the SSEC 3300 system’s Class 1 mini-environment. In a typical configuration, four blades move wet wafers through serial processing steps, with two blades for wet wafers and two blades for dry wafers. All axes are driven by high speed servos. Systems may be equipped with two, three, or more handling robots for high throughput operation, including complex serial processes. Generally one robot is dedicated to input/output, while the others handle wafers between processing modules.


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Tooling for Thin Wafers and
SEMI Standard Wafers
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Single wafer tooling that supports both thin wafers, to
80 µ, and SEMI standard wafers for wet processing meets the demand for ultra-thin wafers used in advanced device packaging. This innovative tooling, used in robotics, spindle tools, and immersion, supports and protects the delicate thin wafers from damage. There is no hardware changeover for handling either thin or SEMI standard wafers.

     

Backside Thinning and Stress Relief
(Patent Pending)

Etch processing can be used for thinning both silicon and GaAs wafers to 70 µ. The active area is protected by backside nitrogen flow on the gas-sealed tool. The fluid flow and direction depend on the wafer rotation, dispense rate, and delivery arm profile. In thinning operation, the WaferChek monitoring system is calibrated with two standards, allowing measurement of intermediate layer thicknesses.


   

 

 

 

Edge Grip and Flip Robot for Photomasks <empty>
<empty>Versatile edge grip handlers accommodate two sizes of glass without tooling change and only a programming change for different glass size. Flip handling is provided for double-sided processing.
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Per Wafer Data Logging
Process variables are logged on a per wafer basis, with a choice of the variables to track, including temperature, flow, concentrations, spin speeds, WaferChek™, endpoint, etc. The operator also has a choice of when the data is to be tracked.

     

Ergonomic Cassette Loading
Handlers accept wafers in safe, horizontal orientation, positioned for input/output access. This approach reduces the risk of damage and operator strain, a part of SEMI® S2-0703aE Safety and SEMI S8-0705 Ergonomics compliance.

   

FOUP Openers and SMIFs
A fully integrated system handles FOUPs, including Asyst and Brooks, and SMIFs with smart tags, in compliance with SEMI E-15. SSEC's SECS-II/GEM software provides full management capability, including E-87 Carrier Management, E-94 Control Job Management, E-40 Process Job Management, and E-90 Substrate Tracking.


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Bulk Chemistry Management
and Blending Systems

A fully vacuum- and pressure-driven chemistry management system controls all flows, without the potential for contamination in a system with moving
parts.

Programmable chemical blending and dilution, with supplies from concentrate, and recirculation minimize operating expense and chemistry disposal requirements. The entire chemistry circuit is constructed of the highest grade wet chemistry components, including pneumatic valves with flared fittings, flared manifolds, and connectors.

Supply can be from either built-in or separate chemistry management systems, with bulk feed from containers from one-gallon bottles to 55-gallon drums.